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 GP1S25J0000F
GP1S25J0000F
SMT, Gap : 1.6mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter
Description
GP1S25J0000F is a compact-package, phototransistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides noncontact sensing. The compact package series is a result of unique technology combing transfer and injection molding. This device has two positioning pins, right angle package, and is reflow solderable.
Agency approvals/Compliance
1. Compliant with RoHS directive
Applications
1. General purpose detection of object presence or motion. 2. Example: printer, lens control for camera
Features
1. Transmissive with phototransistor output 2. Highlights: * Compact Size * Positioning Pin * Surface Mount Type (SMT) * Sideling terminal 3. Key Parameters: * Gap Width: 1.6mm * Slit Width (detector side): 0.3mm * Package: 3.85x3.4x5.2mm 4. Lead free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D3-A00102EN Date Sep. 1. 2006 (c) SHARP Corporation
GP1S25J0000F
Internal Connection Diagram
Top view
4 3 2 1 1 Anode 2 Collector 3 Emitter 4 Cathode
Outline Dimensions
Top view
a
(Unit : mm)
2.5 a 0.6 (0.85) 1 1.6 1.25 SHARP mark "S" 5.2 3.4 Optical center (C0.3) 0.15-0.10
+0.20
a-a section (0.3) Slit width
Date code 0.8
Gate position
4
3
(1)
0.4 0.87 0.8
1234
0.87 (C0.3)
1 2 3 4
Product mass : approx. 0.09g
* Tolerance : 0.2 mm * ( ) : In dimensions for reference * The dimensions indicated by refer to those measured from the lead base. * Dimensions shown do not include burr. Burr's dimension : 0.15mm MAX. Rest of gate : 0.3mm MAX.
Plating material : SnCu (Cu : TYP. 2%)
Sheet No.: D3-A00102EN
2
GP1S25J0000F
Date code (2 digit)
1st digit Year of production A.D. Mark 2000 0 2001 1 2002 2 2003 3 2004 4 2005 5 2006 6 2007 7 2008 8 2009 9 2010 0 : : 2nd digit Month of production Month Mark 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 X 11 Y 12 Z
repeats in a 10 year cycle
Rank mark
There is no rank indicator.
Country of origin
Japan
Sheet No.: D3-A00102EN
3
GP1S25J0000F
Absolute Maximum Ratings
Parameter Forward current Input Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature 1 Soldering temperature
Symbol Rating IF 50 VR 6 P 75 VCEO 35 VECO 6 IC 20 75 PC 100 Ptot Topr -25 to +85 Tstg -40 to +100 Tsol 260
(Ta=25C) Unit mA V mW V V mA mW mW C C C
1 For 3s
Electro-optical Characteristics
Parameter Forward voltage Input Reverse current Output Collector dark current Collector current Transfer Collector-emitter saturation voltage characRise time teristics Response time Fall time Symbol VF IR ICEO IC VCE(sat) tr tf Condition IF=20mA VR=3V VCE=20V VCE=5V, IF=5mA IF=10mA, IC=50A VCE=5V, IC=100A, RL=1k MIN. - - - 50 - - - TYP. 1.2 - - - - 35 35
(Ta=25C) MAX. Unit 1.4 V 10 A 100 nA 300 A 0.4 V 100 s 100 s
Sheet No.: D3-A00102EN
4
GP1S25J0000F
Fig.1 Forward Current vs. Ambient Temperature
60 50
Fig.2 Power Dissipation vs. Ambient Temperature
120 100 Power dissipation P, Pc, Ptot (mW) 80 75 60 40 20 15 0 -25 0 25 50 75 85 100 P, Pc Ptot
Forward current IF (mA)
40 30 20 10 0 -25
0
25
50
75 85
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fig.3 Forward Current vs. Forward Voltage
Fig.4 Collector Current vs. Forward Current
2
Ta=75C 100 50C
25C 0C -25C Collector current IC (mA)
VCE=5V Ta=25C
Forward current IF (mA)
1.6
1.2
10
0.8
0.4 1 0 0.5 1 1.5 2 2.5 3 Forward voltage VF (V)
0
0
4
8
12
16
20
Forward current IF (mA)
Fig.5 Collector Current vs. Collector-emitter Voltage
3
Fig.6 Relative Collector Current vs. Ambient Temperature
120 110 100 Collector current IC (mA) 90 80 70 60 50 40 30 20 10 0 -25
IF=5mA VCE=5V
Collector current IC (mA)
2.4
1.8
IF=50mA 40mA
1.2
30mA 20mA
0.6
10mA 5mA 0 2 4 6 8 10
0
0
25
50
75
Collector-emitter voltage VCE (V)
Ambient temperature Ta (C)
Sheet No.: D3-A00102EN
5
GP1S25J0000F
Fig.7 Collector-emitter Saturation Voltage vs. Ambient Temperature
0.2 Collector-emitter saturation voltage VCE(sat) (V) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 -25 0 25 50 75 85 IF=10mA IC=50A
Fig.8 Dark Current vs. Ambient Temperature
10-6
VCE=20V
10-7 Dark current ICEO (A)
10-8
10-9
10-10
0
25
50
75
100
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Fig.9 Response Time vs. Load Resistance
1 000 VCE =5V IC =100A
tr tf
Fig.10 Test Circuit for Response Time
V CC RD Input RL Output
Input
Response time (s)
100
Output td ts tr tf
10% 90%
10
td ts
1 0.1
1
10
100
1 000
Load resistance RL (k)
Fig.11 Detecting Position Characteristics (1)
100 90 Relative current transfer ratio (%) 80 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 Shield moving distance L (mm) IF=5mA VCE=5V L=0 L
Fig.12 Detecting Position Characteristics (2)
100 90 Relative current transfer ratio (%) 80 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 Shield moving distance L (mm) IF=5mA VCE=5V L L=0
Sheet No.: D3-A00102EN
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
6
GP1S25J0000F
Design Considerations Design guide
1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) Position of opaque board Opaque board shall be installed at place 1.6mm or more from the top of elements. (Example)
1.6mm or more
1.6mm or more
This product is not designed against irradiation and incorporates non-coherent IRED.
Degradation
In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration.
Parts
This product is assembled using the below parts.
* Photodetector (qty. : 1)
Category Phototransistor Material Silicon (Si) Maximum Sensitivity wavelength (nm) 930 Sensitivity wavelength (nm) 700 to 1 200 Response time (s) 20
* Photo emitter (qty. : 1)
Category Infrared emitting diode (non-coherent) Material Gallium arsenide (GaAs) Maximum light emitting wavelength (nm) 950 I/O Frequency (MHz) 0.3
* Material
Case Black polyphernylene sulfide resin (UL94 V-0) Lead frame 42Alloy
Sheet No.: D3-A00102EN
7
GP1S25J0000F
Manufacturing Guidelines Storage and management after open Storage condition
Storage temp.: 5 to 30C, Storage humidity : 70%RH or less at regular packaging.
Treatment after opening the moisture-proof package
After opening, you should mount the products while keeping them on the condition of 5 to 25C and 70%RH or less in humidity within 4 days. After opening the bag once even if the prolonged storage is necessary, you should mount the products within two weeks. And when you store the rest of products you should put into a DRY BOX. Otherwise after the rest of products and silicagel are sealed up again, you should keep them under the condition of 5 to 30C and 70%RH or less in humidity.
Baking before mounting
When the above-mentioned storage method could not be executed, please process the baking treatment before mounting the products. However the baking treatment is permitted within one time. Recommended condition : 125C, 16 to 24 Hour Do not process the baking treatment with the product wrapped. When the baking treatment processing, you should move the products to a metallic tray or fix temporarily the products to substrate.
Soldering Method Reflow Soldering:
Reflow soldering should follow the temperature profile shown below. Soldering should not exceed the curve of temperature profile and time. Please solder within one time.
MAX 240C 1 to 4C/s 200C
MAX 160C
1 to 4C/s
1 to 4C/s
25C MAX10s MAX120s MAX60s MAX90s
Sheet No.: D3-A00102EN
8
GP1S25J0000F
Hand soldering
Hand soldering should be completed within 3 s when the point of solder iron is below 350C. Please solder within one time. Please don't touch the terminals directly by soldering iron. Soldered product shall treat at normal temperature.
Other notice
Please take care not to let any external force exert on lead pins. Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions.
Note for installing
Please don't give force to lead. Because inner 2-leads in 4-leads are put in package by forming, they may come off by force.
Lead pin
Lead terminals of this product are tin copper alloy plated. Before usage, please evaluate solderability with actual conditions and confirm. And the uniformity in color for the lead terminals are not specified.
Cleaning instructions Solvent cleaning :
Solvent temperature should be 45C or below. Immersion time should be 3 minutes or less.
Ultrasonic cleaning :
Do not execute ultrasonic cleaning.
Recommended solvent materials :
Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.
Presence of ODC
This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBB and PBDE are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). *Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE).
Sheet No.: D3-A00102EN
9
GP1S25J0000F
Package specification Sleeve package Package materials
Sleeve : Polyphernylene Stopper : Styrene-Elastomer Aluminum laminated Bag : Nylon, Polyphernylene, Aluminum
Package method
MAX. 50 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers. MAX. 40 sleeves with silicagel are enclosed in aluminum laminated bag. After sealing up the bag, it encused in one case.
Sheet No.: D3-A00102EN
10
GP1S25J0000F
Important Notices
* The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices. * Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. * Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba). * If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices. * This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party. * Contact and consult with a SHARP representative if there are any questions about the contents of this publication.
[H126]
Sheet No.: D3-A00102EN
11


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